The interface between a polar perovskite oxide and silicon from monoatomic lines
Résumé
We report a study on the interface of polar high-$\kappa$ materials with reconstructed Si(001)2x1 surface. LaAlO$_3$ is taken as a prototype material. The building of the interface is based on the prior growth of metal lines followed by oxidation. Electronic structure calculation of the interface within the DFT framework also helps to build it and understand bondings. Moreover, the conduction band offset is computed to be 1.89 eV, in agreement with electronic applications requirement. The results may provide a guidance for interface processing.