Single-Frequency High-Power Continuous-Wave Oscillation at 1003 nm of an Optically Pumped Semiconductor Laser

Mathieu Jacquemet (1) , Manuela Domenech (1) , Julie Dion (2) , Martin Strassner (2) , Gaëlle Lucas-Leclin (1) , Patrick Georges (1) , Isabelle Sagnes (2) , Arnaud Garnache (3)

1 Laboratoire Charles Fabry de l'Institut d'Optique / Elsa
2 LPN - Laboratoire de photonique et de nanostructures
3 CEM2 - Centre d'Electronique et de Micro-optoélectronique de Montpellier

This work reports single-frequency laser oscillation at 1003.4 nm of an optically pumped external cavity semiconductor laser. By using a gain structure bonded onto a high conductivity substrate, we demonstrate both theoretically and experimentally the strong reduction of the thermal resistance of the active semiconductor medium, resulting in a high power laser emission. The spectro-temporal dynamics of the laser is also explained. Furthermore, an intracavity frequency-doubling crystal was used to obtain a stable single-mode generation of blue (501.5 nm) with an output power around 60 mW.

Mots clés: Thermal Management; Vertical External Cavity Semiconductor Emitting Laser (VECSEL); Non-linear conversion; Single Frequency; Non-linear conversion.

Domaines: Optique [physics.optics]

Mathieu Jacquemet, Manuela Domenech, Julie Dion, Martin Strassner, Gaëlle Lucas-Leclin, et al.. Single-Frequency High-Power Continuous-Wave Oscillation at 1003 nm of an Optically Pumped Semiconductor Laser. Proceedings SPIE Photonics Europe, 2006, Strasbourg, France. 11 p. ⟨hal-00081543v2⟩