Conduction band offset in the AlxGayIn1–x–yP/Ga0.52In0.48P system as studied by luminescence spectroscopy - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Applied Physics Année : 2003

Conduction band offset in the AlxGayIn1–x–yP/Ga0.52In0.48P system as studied by luminescence spectroscopy

Résumé

The conducton band offset (CBO) in the AlxGayIn1-x-yP/Ga0.52In0.4 8P heterostructures was measured and analyzed. The methods employed for the measurement included photoluminescence and photoluminescence excitation spectroscopy. The parameters involved in the model solid theory were masured precisely. It was concluded through estimation of parameters of the model solid theory that strained AlxGayIn1-x-yP cannot improve the conduction offset compared to the strain-free material.

Domaines

Electronique
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Dates et versions

hal-00018496 , version 1 (25-05-2022)

Identifiants

Citer

D. Vignaud, F. Mollot. Conduction band offset in the AlxGayIn1–x–yP/Ga0.52In0.48P system as studied by luminescence spectroscopy. Journal of Applied Physics, 2003, 93 (1), pp.384. ⟨10.1063/1.1528309⟩. ⟨hal-00018496⟩
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