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Experimental study of hot-electron inelastic scattering rate in p-type InGaAs

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https://hal.archives-ouvertes.fr/hal-00018482
Contributor : Véronique Gysembergh Connect in order to contact the contributor
Submitted on : Friday, February 3, 2006 - 10:03:27 AM
Last modification on : Tuesday, October 19, 2021 - 6:37:55 PM

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  • HAL Id : hal-00018482, version 1

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D. Sicault, R. Teissier, F. Pardo, J.L. Pelouard, F. Mollot. Experimental study of hot-electron inelastic scattering rate in p-type InGaAs. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2002, 65, 12, pp.121301. ⟨hal-00018482⟩

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