Tuning the ferromagnetic properties of hydrogenated GaMnAs

Aristide Lemaître , L. Thevenard , M. Viret , L. Largeau , O. Mauguin , B. Theys , Frédéric Bernardot (1) , Rania Bouanani-Rabhi (1) , Bernard Clerjaud (1) , F. Jomard

1 INSP - Institut des Nanosciences de Paris

The neutralization of Mn acceptors by hydrogenation is used as a tool to investigate the dependence of the magnetic properties of ferromagnetic GaMnAs upon the hole concentration. The suppression of ferromagnetism and the emergence of a paramagnetic phase are observed after hydrogenation. The ferromagnetic phase is progressively restored after subsequent annealings, with Curie temperature increasing with hole density.

Mots clés: magnetic semiconductors; ferromagnetic materials; gallium compounds; manganese compounds; arsenic compounds; hydrogenation

Aristide Lemaître, L. Thevenard, M. Viret, L. Largeau, O. Mauguin, et al.. Tuning the ferromagnetic properties of hydrogenated GaMnAs. PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, 2005, Flagstaff, United States. pp.363, ⟨10.1063/1.1994139⟩. ⟨hal-00008648⟩