High-power high-efficiency millimeter wave TED's with reverse-biased heterojunction cathode contact

Marie-Renée Friscourt (1) , Paul-Alain Rolland (1) , J.P. Duchemin , J. Lacombe

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

The purpose of this paper is to present theoretical results on current limiting cathode contact InP TED's in the millimeter wave range. The current limiting effect is obtained from a reverse-biased GaInAsP on InP isotype heterojunction. This kind of cathode contact yields an efficient over length dipolar layers mode up to the ultimate cut-off frequency of the negative differential mobility in InP (~200 GHz). Theoretically expected results are reported. Thermal and frequency limitations are discussed. We also mention the main problems encountered in the preliminary technological study of these devices.

Domaines: Sciences de l'ingénieur [physics]

Marie-Renée Friscourt, Paul-Alain Rolland, J.P. Duchemin, J. Lacombe. High-power high-efficiency millimeter wave TED's with reverse-biased heterojunction cathode contact. 15th European Microwave Conference, Sep 1985, Paris, France. ⟨10.1109/EUMA.1985.333477⟩. ⟨hal-00005278⟩