GaAs monolithic transferred-electron devices for millimeter waves applications

Paul-Alain Rolland (1) , A. Cappy (1) , Marie-Renée Friscourt (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

The authors point out the existence of two different operating modes in a planar GaAs transferred-electron oscillator with a current limiting MESFET cathode. The respective advantages and drawbacks of these two modes are discussed on the basis of further monolithic integration. The influence of the operating conditions on the RF performance are given in the 100 GHz window.

Domaines: Sciences de l'ingénieur [physics]

Paul-Alain Rolland, A. Cappy, Marie-Renée Friscourt. GaAs monolithic transferred-electron devices for millimeter waves applications. IEEE Microwave Theory and Technique Symposium, Dec 1985, Saint-Louis, Missouri, United States. ⟨hal-00005265⟩