Cofabrication of semiconducting and superconducting YBa2Cu3O7 devices on (100) Si substrates - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2004

Cofabrication of semiconducting and superconducting YBa2Cu3O7 devices on (100) Si substrates

Résumé

We report the process technology for the modular integration of YBa2Cu3O7 (YBCO) and p-type metal-oxide-semiconductor (p-MOS) devices on the same silicon substrate. Basic test structures consisting of single p-MOS field-effect transistors with a Pt-based metallization and YBCO bridges were fabricated. After completion of the p-MOS fabrication, highly c-axis-oriented YBCO films showing a critical temperature of 86 K were grown on a free silicon surface. The electrical characteristics at 77 K of the p-MOS transistors were comparable to those of this technology with Al metallization. This means that no fatal degradation was introduced into the p-MOS process by the YBCO one. The cofabrication on the same silicon substrate of devices using such disparate technologies as YBCO and MOS is a very promising starting point for a new generation of monolithic integrated circuits combining the advantages of oxide and semiconductor properties.
Fichier principal
Vignette du fichier
article_apl.pdf (798.16 Ko) Télécharger le fichier
Loading...

Dates et versions

hal-00002865 , version 1 (17-09-2004)

Identifiants

  • HAL Id : hal-00002865 , version 1

Citer

Laurence Méchin, Guillaume R. K. Huot, Daniel Bloyet. Cofabrication of semiconducting and superconducting YBa2Cu3O7 devices on (100) Si substrates. Applied Physics Letters, 2004, 85, pp.15. ⟨hal-00002865⟩
101 Consultations
85 Téléchargements

Partager

Gmail Facebook X LinkedIn More