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Pré-Publication, Document De Travail Année : 2004

Dependence of the superconducting transition temperature on the doping level in single crystalline diamond films.

Résumé

Homoepitaxial diamond layers doped with boron in the 10^20-10^21 /cm3 range are shown to be type II superconductors with sharp transitions (~0.2K) at temperatures increasing from 0 to 2.1 K with boron contents. The critical concentration for the onset of superconductivity is about 5-7 10^20 /cm3, close to the metal-insulator transition. The H-T phase diagram has been obtained from transport and a.c. susceptibility measurements down to 300mK. These results bring new quantitative constraints on the theoretical models proposed for superconductivity in diamond.
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Dates et versions

hal-00002689 , version 1 (24-08-2004)

Identifiants

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Etienne Bustarret, Jozef Kacmarcik, C. Marcenat, Etienne Gheeraert, Catherine Cytermann, et al.. Dependence of the superconducting transition temperature on the doping level in single crystalline diamond films.. 2004. ⟨hal-00002689⟩
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