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Robustness improvement of an SRAM cell against laser-induced fault injection

Abstract : This paper presents the design of an SRAM cell with a robustness improvement against laser-induced fault injection. We report the fault sensitivity mapping of a first SRAM design. A careful analysis of its results combined with the use of an electrical model at transistor level of the photoelectric effect induced by a laser permit us to validate our approach. The robustness improvement is due to a specific layout which takes into account the topology of the cell and to the effect of a triple well implant on the laser sensitivity of NMOS transistors.
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Submitted on : Saturday, January 24, 2015 - 7:06:22 PM
Last modification on : Thursday, September 17, 2020 - 10:40:38 AM
Long-term archiving on: : Saturday, April 25, 2015 - 10:12:16 AM


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Alexandre Sarafianos, Mathieu Lisart, Olivier Gagliano, Valérie Serradeil, Cyril Roscian, et al.. Robustness improvement of an SRAM cell against laser-induced fault injection. Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2013 IEEE International Symposium on, Oct 2013, New York, United States. ⟨10.1109/DFT.2013.6653598⟩. ⟨emse-01109141⟩



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