BAW Pressure Sensor on LiNbO3 Membrane Lapping

T. Baron (1) , J. Masson (1) , J.-P. Romand (2) , S. Alzuaga (1) , Lise Catherinot (3) , Matthieu Chatras (3) , S. Ballandras (1)

1 FEMTO-ST - Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174)
2 ENSMM - Ecole Nationale Supérieure de Mécanique et des Microtechniques
3 MINACOM

In this paper, we have proposed a new concept for pressure and more generally stress sensors exploiting single-crystal based HBAR. After describing the operation principle, the practical feasibility of the sensor has been shown, yielding electrical results allowing a first characterization of such sensor sensitivity. The process flow is generic and allows us to develop different devices such as HBAR or SAW sensors with the freedom of choosing material in function of the design requirements. Although the first reported results can not exploit the high quality resonance of such HBARs, more effort will be performed in the next future to definitely validate the approach and the corresponding stress sensitivity.

Domaines: Acoustique [physics.class-ph]; Acoustique [physics.class-ph]

T. Baron, J. Masson, J.-P. Romand, S. Alzuaga, Lise Catherinot, et al.. BAW Pressure Sensor on LiNbO3 Membrane Lapping. EFTF 2010, 24th European Frequency and Time Forum, Apr 2010, Noordwijk, Netherlands. ⟨10.1109/EFTF.2010.6533644⟩. ⟨hal-00578951⟩