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High-Overtone Bulk Acoustic Wave Resonator on Galliumnitride

Abstract : In our previous research we already demonstrated micro acoustic devices, such as membrane based thin film bulk acoustic shear wave resonators and surface acoustic shear wave resonators, based on Metal-Organic-Vapour-Phase-Epitaxial (MOVPE) grown highly oriented a-plane piezoelectric material. Although MOVPE is a well established process for compound semiconductor layer growth especially of III-V semiconductors as InP, GaAs, and the nitrides GaN or AlN as also design and simulation of micro acoustic devices is nowadays a well established knowledge, the linkage between both is quite a technological challenge. Using an adapted MOVPE growth process for a-plane GaN on r-plane sapphire with a process linked improved surface quality; the challenge to build up high-overtone bulk acoustic wave resonators (HBAR) with a shear polarization of the acoustic wave was risen within this research. Different designs of MEMS-based prototypes of HBARs were processed on a-plane GaN after intensive simulations, their acoustic electrical behaviour analyzed and the temperature coefficient of frequency determined.
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Submitted on : Tuesday, May 11, 2021 - 5:16:32 PM
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M. Loschonsky, D. Eisele, J. Masson, M. Wieneke, S. Alzuaga, et al.. High-Overtone Bulk Acoustic Wave Resonator on Galliumnitride. Joint Meeting of the 23rd European Frequency and Time Forum/IEEE International Frequency Control Symposium, Apr 2009, Besançon, France. pp.309-315, ⟨10.1109/FREQ.2009.5168192⟩. ⟨hal-00533725⟩



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