Development of SiC MOSFET electrical model and experimental validation: improvement and reduction of parameter number

Quang Nguyen (1) , Patrick Tounsi (2, 3) , Jean-Pierre Fradin (4) , Jean-Michel Reynes (1)

1 IRT Saint Exupéry - Institut de Recherche Technologique
2 INSA Toulouse - Institut National des Sciences Appliquées - Toulouse
3 LAAS-ESE - Équipe Énergie et Systèmes Embarqués
4 Icam Toulouse

In this work, a new approach for electrical modeling of Silicon Carbide (SiC) MOSFET is presented. The developed model is inspired from the Curtice model which is using a mathematic function reflecting MOSFET output characteristics. The first simulation results showed good agreement with measurements. Improvement is needed in order to increase model accuracy and to take into account the influence of the junction temperature on device characteristics.

Mots clés: MOSFET; Silicon Carbide (SiC); SPICE model

Domaines: Energie électrique; Electronique; Matériaux

Quang Nguyen, Patrick Tounsi, Jean-Pierre Fradin, Jean-Michel Reynes. Development of SiC MOSFET electrical model and experimental validation: improvement and reduction of parameter number. 26th International Conference "Mixed Design of Integrated Circuits and Systems MIXDES 2019, Lodz University of Technology Department of Microelectronics and Computer Science, Jun 2019, Rzeszów, Poland. ⟨hal-03655841⟩