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The Determination of the Optical Bandgap of the Bernal and Rhombohedral Boron Nitride Polymorphs

Adrien Rousseau 1, 2 Matthieu Moret 1, 3 Pierre Valvin 1, 2 Wilfried Desrat 1, 3 Jiahan Li 4 Lianjie Xue 4 E. Janzen 4 James Edgar 4 Guillaume Cassabois 1, 2 Bernard Gil 1, 2, *
* Corresponding author
2 S2QT
L2C - Laboratoire Charles Coulomb
3 PV2D
L2C - Laboratoire Charles Coulomb
Abstract : We report a study of polymorphic boron nitride samples. We interpret the photoluminescence line at 6.032±0.005 eV, that can be recorded at 8K in sp2-bonded boron nitride, as being the signature of the excitonic fundamental bandgap of the Bernal (or graphitic) boron nitride polymorph (bBN). This is determined by advanced photoluminescence measurements combined with x-ray characterizations on pure hexagonal boron nitride (hBN) and on polymorphic crystal samples, later compared with the theoretical predictions of Lorenzo Sponza, et al., Physical Review B 98, 125206 (2018). The overall picture is consistent with a direct excitonic fundamental bandgap of the Bernal (or graphitic) polymorph of boron nitride. This value dXb = 6.032±0.005 eV is higher than the indirect bandgap of hBN (iXh =5.955±0.005 eV).
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Submitted on : Thursday, June 17, 2021 - 8:46:27 AM
Last modification on : Thursday, November 25, 2021 - 9:39:18 AM

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Adrien Rousseau, Matthieu Moret, Pierre Valvin, Wilfried Desrat, Jiahan Li, et al.. The Determination of the Optical Bandgap of the Bernal and Rhombohedral Boron Nitride Polymorphs. Physical Review Materials, American Physical Society, 2021, 5, pp.064602. ⟨10.1103/PhysRevMaterials.5.064602⟩. ⟨hal-03263151⟩

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