Cross-Section Doping Topography of 4H-SiC VJFETs by Various Techniques

Abstract : Different methods for cross-section characterization of SiC Trenched-singly-implanted vertical junction field effect transistors (TSI-VJFETs) are presented with the purpose to determine the epitaxial structure in terms of doping topography.
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Submitted on : Tuesday, February 5, 2019 - 5:27:18 PM
Last modification on : Wednesday, April 10, 2019 - 5:34:05 PM

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Katerina Tsagaraki, Maher Nafouti, Herve Peyre, Konstantinos Vamvoukakis, Nikolaos Makris, et al.. Cross-Section Doping Topography of 4H-SiC VJFETs by Various Techniques. ICSCRM 2017 (, USA) September 17-22, Sep 2017, Washington, DC, United States. pp.653-656, ⟨10.4028/www.scientific.net/MSF.924.653⟩. ⟨hal-02008585⟩

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