Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy

Abstract : Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy
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Poster communications
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https://hal.archives-ouvertes.fr/hal-01937537
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Submitted on : Wednesday, November 28, 2018 - 10:43:31 AM
Last modification on : Wednesday, April 10, 2019 - 5:34:05 PM

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  • HAL Id : hal-01937537, version 1

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Julien Brault, Mathieu Leroux, Samuel Matta, Mohamed Al Khalfioui, Benjamin Damilano, et al.. Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy. International Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan. ⟨hal-01937537⟩

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