Cross-section doping topography of 4H-SiC VJFETs by various techniques

K. Tsagaraki (1) , Maher Nafouti (2) , H. Peyre (3) , K Vamvoukakis (1) , N Makris (1) , M Kayambaki (1) , A Stavrinidis (1) , G Konstantinidis (1) , M Panagopoulou (1) , D. Alquier (2) , Konstantinos Zekentes

1 IESL - Institute for Electronic Structure and Laser
2 GREMAN - UMR 7347 - GREMAN (matériaux, microélectronique, acoustique et nanotechnologies)
3 L2C - Laboratoire Charles Coulomb

Different methods for cross-section doping topography of SiC Trenched-singly-implanted vertical junction field effect transistors (TSI-VJFETs) are presented with the purpose to determine the doping distribution in the epitaxial structure and the implanted areas.

Mots clés: TSI-VJFET; SIMS; SSRM; SEM; Silicon Carbide; SCM

Domaines: Electronique

K. Tsagaraki, Maher Nafouti, H. Peyre, K Vamvoukakis, N Makris, et al.. Cross-section doping topography of 4H-SiC VJFETs by various techniques. International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), Sep 2017, Washington, DC, United States. ⟨10.4028/www.scientific.net/MSF.924.653⟩. ⟨hal-01698971⟩