III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet

Julien Selles (1) , V. Crepel (2) , I. Roland , M. El Kurdi , X. Checoury , P. Boucaud , Meletios Mexis (2, 3) , M. Leroux (3) , B. Damilano (3) , S. Rennesson (3) , F. Semond (3) , B. Gayral (4) , Christelle Brimont (2) , Thierry Guillet (2)

1 MSC - Matière et Systèmes Complexes
2 L2C - Laboratoire Charles Coulomb
3 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications
4 NPSC - Nanophysique et Semiconducteurs

We present a series of microdisk lasers realized within the same GaN-on-Si photonic platform scheme, and operating at room temperature under pulsed optical pumping over a broad spectral range extending over λ = 275 nm–470 nm. The III-nitride microdisks embed either binary GaN/AlN multiple quantum wells (MQWs) for UV operation, or ternary InGaN/GaN MQWs for violet and blue operation. This demonstrates the versatility of this nitride-on-silicon platform, and the realization on this platform of efficient active layers for lasing action over a 200 nm broad UV to visible spectral range. We probe the lasing threshold carrier density over the whole spectral range and found that it is similar whatever the emission wavelength for these Q > 1000 microdisk resonators with a constant material quality until quantum confined Stark effect takes over. The threshold is also found independent of microdisk diameters from 3 to 12 μm, with a β factor intermediate between the one of vertical cavity lasers and the one of small modal volume “thresholdless” lasers.

Domaines: Autre [cond-mat.other]

Julien Selles, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, et al.. III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet. Applied Physics Letters, 2016, 109 (23), pp.231101. ⟨10.1063/1.4971357⟩. ⟨hal-01469387⟩