III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet

Abstract : We present a series of microdisk lasers realized within the same GaN-on-Si photonic platform scheme, and operating at room temperature under pulsed optical pumping over a broad spectral range extending over λ = 275 nm–470 nm. The III-nitride microdisks embed either binary GaN/AlN multiple quantum wells (MQWs) for UV operation, or ternary InGaN/GaN MQWs for violet and blue operation. This demonstrates the versatility of this nitride-on-silicon platform, and the realization on this platform of efficient active layers for lasing action over a 200 nm broad UV to visible spectral range. We probe the lasing threshold carrier density over the whole spectral range and found that it is similar whatever the emission wavelength for these Q > 1000 microdisk resonators with a constant material quality until quantum confined Stark effect takes over. The threshold is also found independent of microdisk diameters from 3 to 12 μm, with a β factor intermediate between the one of vertical cavity lasers and the one of small modal volume “thresholdless” lasers.
Type de document :
Article dans une revue
Applied Physics Letters, American Institute of Physics, 2016, 109 (23), pp.231101. 〈10.1063/1.4971357〉
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https://hal.archives-ouvertes.fr/hal-01469387
Contributeur : L2c Aigle <>
Soumis le : jeudi 16 février 2017 - 13:59:20
Dernière modification le : jeudi 3 mai 2018 - 12:56:10

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Julien Selles, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, et al.. III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet. Applied Physics Letters, American Institute of Physics, 2016, 109 (23), pp.231101. 〈10.1063/1.4971357〉. 〈hal-01469387〉

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