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Terahertz studies of 2D and 3D topological transitions

Abstract : We report terahertz measurements on bulk HgCdTe crystals at the semiconductor- to-semimetal topological transition and InAs/GaSb inverted band structure quantum well. We show that physical parameters of these narrow gap systems driven in specific topological phases can be efficiently extracted by means of terahertz photoconductivity studies.
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Submitted on : Monday, January 4, 2016 - 4:36:24 PM
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M. Marcinkiewicz, Frederic Teppe, Christophe Consejo, Nina Diakonova, Wilfried Desrat, et al.. Terahertz studies of 2D and 3D topological transitions. 19TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON' 19), 2015, Salamanca, Spain. pp.UNSP 012037, ⟨10.1088/1742-6596/647/1/012037⟩. ⟨hal-01249953v2⟩

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