Skip to Main content Skip to Navigation
Conference papers

Detection of high intensity THz radiation by field effect transistors

Abstract : Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm2 was studied InGaAs high electron mobility transistors. The observed signal saturation behavior is explained by analogy with current saturation in standard direct currents output characteristics. The theoretical model of terahertz field effect transistor photoresponse was developed shows a good description match with experimental data. Our experimental results show that dynamic range of field effect transistors based terahertz detectors is very high and can extend from mW/cm2 up to kW/cm2.
Document type :
Conference papers
Complete list of metadata

https://hal.archives-ouvertes.fr/hal-01126627
Contributor : L2c Aigle Connect in order to contact the contributor
Submitted on : Friday, March 6, 2015 - 2:03:37 PM
Last modification on : Monday, October 11, 2021 - 1:23:47 PM

Identifiers

  • HAL Id : hal-01126627, version 1

Collections

Citation

Dmytro But, Mikola V. Sakhno, Jonathan Oden, T. Notake, Nina V. Dyakonova, et al.. Detection of high intensity THz radiation by field effect transistors. 26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2014, Montpellier, France. pp.1. ⟨hal-01126627⟩

Share

Metrics

Record views

133