Second Harmonic Generation in GaN-based photonic crystals for single molecule investigations

Abstract : III-Nitride semiconductors are promising nonlinear materials for optical wavelength conversion. However second harmonic generation in bulk GaN is weak because GaN is strongly dispersive. We show that appropriate photonic crystal patterning in GaN helps to overcome dispersion and provides quasi-phase matching conditions, resulting in substantially increased conversion efficiency obtained in a flexible manner. Enhancement factors of more than five orders of magnitude can be achieved. Use of photonic crystals makes it possible to reduce the effective observation volume, thereby opening new opportunities such as the study of single-molecule dynamics, even in high concentration solutions. We have demonstrated sharp enhancement of the fluorescence of single molecules immobilized on the surface of a GaN photonic crysta,l when the molecules are excited via the resonant second harmonic generation process.
Type de document :
Communication dans un congrès
GALLIUM NITRIDE MATERIALS AND DEVICES VII, Jan 2012, San Francisco (CA), United States. SPIE-INT SOC OPTICAL ENGINEERING, PO BOX 10, BELLINGHAM, WA 98227-0010 USA, 8262, pp.82621R, 2012, 〈10.1117/12.905593〉
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https://hal.archives-ouvertes.fr/hal-00704334
Contributeur : L2c Aigle <>
Soumis le : mardi 5 juin 2012 - 11:19:31
Dernière modification le : jeudi 11 janvier 2018 - 06:23:20

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Dominique Coquillat, Jeremie Torres, Marine Le Vassor D'Yerville, David Cassagne, Frederic Teppe, et al.. Second Harmonic Generation in GaN-based photonic crystals for single molecule investigations. GALLIUM NITRIDE MATERIALS AND DEVICES VII, Jan 2012, San Francisco (CA), United States. SPIE-INT SOC OPTICAL ENGINEERING, PO BOX 10, BELLINGHAM, WA 98227-0010 USA, 8262, pp.82621R, 2012, 〈10.1117/12.905593〉. 〈hal-00704334〉

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