Transport property study of MgO-GaAs(001) contacts for spin injection devices

Abstract : The electrical properties of Au/MgO/n-GaAs(001) tunnel structures have been investigated with capacitance-voltage and current-voltage measurements at room temperature with various MgO thicknesses between 0.5 and 6.0nm. For an oxide thickness higher than 2nm and for low bias voltages, the voltage essentially drops across the oxide and the structure progressively enters the high-current mode of operation with increasing reverse bias voltage, the property sought in spin injection devices. In this mode, we demonstrate that a large amount of charge accumulates at the MgO/GaAsinterface in interface traps located in the semiconductor band gap.
Complete list of metadatas

Cited literature [3 references]  Display  Hide  Download

https://hal.archives-ouvertes.fr/hal-00908143
Contributor : Alice Brébion <>
Submitted on : Friday, November 22, 2013 - 1:44:20 PM
Last modification on : Wednesday, December 11, 2019 - 9:46:06 AM
Long-term archiving on: Sunday, February 23, 2014 - 4:25:21 AM

File

1.2802727-1.pdf
Publisher files allowed on an open archive

Identifiers

Citation

Jean-Christophe Le Breton, S. Le Gall, Guy Jézéquel, Bruno Lépine, Philippe Schieffer, et al.. Transport property study of MgO-GaAs(001) contacts for spin injection devices. Applied Physics Letters, American Institute of Physics, 2007, 91 (17), pp.172112. ⟨10.1063/1.2802727⟩. ⟨hal-00908143⟩

Share

Metrics

Record views

293

Files downloads

343