Si MOS technology for spin-based quantum computing

L. Hutin (1) , B. Bertrand (1) , R. Maurand (2) , A. Crippa (2) , Matias Imanol Urdampilleta (3) , Y.J. Kim , A. Amisse , H. Bohuslavskyi (1) , L. Bourdet (4) , S. Barraud (1) , X. Jeh , Yann Michel Niquet (4) , M. Sanquer (2) , Christopher Bäuerle (3) , Tristan Meunier (3) , S. de Franceschi (2) , M. Vinet (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 LaTEQS - Laboratoire de Transport Electronique Quantique et Supraconductivité
3 NEEL - QuantECA - Circuits électroniques quantiques Alpes
4 LSIM - Laboratory of Atomistic Simulation

We present recent advances made towards the realization of hole and electron spin quantum bits (qubits) localized within Si Quantum Dots (QDs). These devices, operated at cryogenic temperatures, can be defined by slightly modifying an SOI NanoWire FET fabrication flow, and are thus particularly relevant in the perspective of large-scale co-integration of qubits and their cryogenic control electronics.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

L. Hutin, B. Bertrand, R. Maurand, A. Crippa, Matias Imanol Urdampilleta, et al.. Si MOS technology for spin-based quantum computing. 48th European Solid-State Device Research Conference (ESSDERC 2018), Sep 2018, Dresden, Germany. pp.12-17, ⟨10.1109/ESSDERC.2018.8486863⟩. ⟨hal-02142069⟩