Vertical Tunnel Junction Embedding a Spin Crossover Molecular Film

Abstract : Thin films of a molecular spin crossover (SCO) Iron(II) complex featuring a high transition temperature are grown by sublimation in high vacuum on TSAu and investigated by X-ray and UV photoelectron spectroscopies. Temperature-dependent studies demonstrate that the thermally induced spin crossover behavior is preserved in thin films. A large-area ultrathin switchable spin crossover molecular vertical tunnel junction with top electrodes of the liquid eutectic of gallium and indium, for which the spin-state switching of the films induces a two orders of magnitude change in the tunneling current density flowing through the junction, is reported here. The results on large-area junctions, rationalized by density functional theory calculations, demonstrate the high potential of SCO-based switchable molecular junctions as functional devices.
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Article dans une revue
Advanced Electronic Materials, Wiley, 2018, 〈10.1002/aelm.201800204〉
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https://hal.archives-ouvertes.fr/hal-01934788
Contributeur : Eric Cloutet <>
Soumis le : lundi 26 novembre 2018 - 11:29:19
Dernière modification le : mardi 5 mars 2019 - 01:44:07

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Lorenzo Poggini, Mathieu Gonidec, Juan González-Estefan, Gilles Pécastaings, Benoît Gobaut, et al.. Vertical Tunnel Junction Embedding a Spin Crossover Molecular Film. Advanced Electronic Materials, Wiley, 2018, 〈10.1002/aelm.201800204〉. 〈hal-01934788〉

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