 |
 |
 |
 |
|
|
|
|
| HAL : hal-00707903, version 1 |
| DOI : 10.1109/WAMICON.2012.6208471 |
| Fiche détaillée |  Récupérer au format |
 |
| IEEE Wireless and Microwave Technology Conference (WAMICON), Cocoa Beach - Floride : États-Unis (2012) |
|
|
|
|
| Low Frequency Parasitic Effects in RF Transistors and their Impact on Power Amplifier Performances |
|
|
| Raymond Quéré 1Raphaël Sommet 1 |
|
|
| (2012) |
|
|
|
| In this paper Low Frequency (LF) parasitic effects are assessed through three kinds of measurements. It is shown that LF S-parameters measurements allow to extract the thermal impedance of Heterojunction Bipolar Transistors (HBTs) and to put dispersive effects of AlGaN/GaN High Electron Mobility Transistors (HEMTs) into evidence. Large signal (RF pulsed and two tone intermodulation) confirm the impact of those parasitic effects on performances of Power Amplifiers. |
|
|
|
|
|
|
|
|
|
|
|
| 1 : | XLIM (XLIM) |
|
|
|
CNRS : UMR7252 – Université de Limoges |
|
|
|
|
|
|
|
|
|
| C2S2 |
|
|
|
|
| hal-00707903, version 1 | |
| http://hal-unilim.archives-ouvertes.fr/hal-00707903 | |
| oai:hal-unilim.archives-ouvertes.fr:hal-00707903 | |
| Contributeur : Véronique Maury | |
| Soumis le : Mercredi 13 Juin 2012, 18:13:59 | |
| Dernière modification le : Mercredi 13 Juin 2012, 18:13:59 | |
