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| HAL: hal-00704049, version 1 |
| DOI: 10.1155/2012/796973 |
| Detailed view |  Export this paper |
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| Hindawi Publishing Corporation 2012, Article ID 796973 (2012) 15 pages |
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| Characterization and modeling of DHBT in InP/GaAsSb technology for the design and fabrication of a Ka Band MMIC oscillator |
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| Sylvain Laurent 1Jean-Christophe Nallatamby 1 |
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| (2012) |
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| This paper presents the design of an MMIC oscillator operating at a 38 GHz frequency. This circuit was fabricated by the III-V Lab with the new InP/GaAsSb Double Heterojunction Bipolar Transistor (DHBT) submicronic technology (We=700mn). The transistor used in the circuit has a 15 μm long two-finger emitter. This paper describes the complete nonlinear modeling of this DHBT, including the cyclostationary modeling of its low frequency (LF) noise sources. The specific interest of the methodology used to design this oscillator resides in being able to choose a nonlinear operating condition of the transistor from an analysis in amplifier mode. The oscillator simulation and measurement results are compared. A 38 GHz oscillation frequency with 8.6 dBm output power and a phase noise of −80 dBc/Hz at 100 KHz offset from carrier have been measured. |
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| 1: | XLIM (XLIM) |
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CNRS : UMR7252 – Université de Limoges |
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| 2: | Institut d'électronique, de microélectronique et de nanotechnologie (IEMN) |
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CNRS : UMR8520 – Institut supérieur de l'électronique et du nunérique (ISEN) – Université Lille I - Sciences et technologies – Université de Valenciennes et du Hainaut-Cambresis |
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| hal-00704049, version 1 | |
| http://hal.archives-ouvertes.fr/hal-00704049 | |
| oai:hal.archives-ouvertes.fr:hal-00704049 | |
| From: Véronique Maury | |
| Submitted on: Monday, 4 June 2012 16:42:20 | |
| Updated on: Monday, 4 June 2012 16:42:20 | |
