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Université d'Orléans |  |
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Université d'Orléans | |
| HAL: in2p3-00115973, version 1 |
| DOI: 10.1016/j.nimb.2006.10.042 |
| Detailed view |  Export this paper |
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| E-MRS IUMRS ICEM 2006 Spring Meeting - Symposium U: Si-based Materials for Advanced Microelectronic Devices: Synthesis, Defects and Diffusion, Nice : France |
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| Structural and nuclear characterizations of defects created by noble gas implantation in silicon oxide |
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| H. Assaf 1E. Ntsoenzok 1, 2 |
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| (2006) |
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| Thermally grown silicon oxide layer was implanted at room temperature with 300keV Xe at fluences ranging from 0.5 to 5x10$^16$Xe/cm$^2$. Bubbles created after Xe-implantation provided a low-k silicon oxide that has potential use as a dielectric material for interconnects in Si integrated circuits. Transmission Electron Microscopy (TEM), Rutherford Backscattering Spectrometry (RBS) and Positron Annihilation Spectroscopy (PAS) were used to provide a comprehensive characterization of defects (bubbles, vacancy, gas atoms and other types of defects) created by Xe implantation in $SiO_2$ layer. These measurements suggest that the bubbles observed with TEM for all fluences were a consequence of the interaction between Xe and vacancies (V), with $V_nXe_m$ complexes created in the zone where V and Xe profiles overlap. Negatively charged defects such as ($Si-O^-$, $Si-O-O^-$ and $O_2^-$) are also created after implantation. |
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| 1: | Centre d'Études et de Recherches par Irradiation (CERI) |
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CNRS : UPR33 |
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| 2: | Laboratoire d' Électronique, Signaux, Images (LESI) |
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Université d'Orléans – Institut Universitaire de Technologie de Chartres – Ecole Polytechnique de l'Université d'Orléans |
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| 3: | Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM) |
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CNRS : UMR8609 – IN2P3 – Université Paris XI - Paris Sud |
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| 4: | Department of Engineering Science (DEPARTMENT OF ENGINEERING SCIENCE) |
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The Pennsylvania State University |
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| Subject(s) | : | Chemical Sciences/Cristallography Physics/Condensed Matter/Other |
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| Low-k SiO2 – Defects – Bubbles – Xe implantation – Positron annihilation spectroscopy – Rutherford Backscattering – Transmission electron microscopy |
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| in2p3-00115973, version 1 | |
| http://hal.in2p3.fr/in2p3-00115973 | |
| oai:hal.in2p3.fr:in2p3-00115973 | |
| From: Dominique Girod | |
| Submitted on: Friday, 24 November 2006 12:00:41 | |
| Updated on: Wednesday, 29 November 2006 13:13:13 | |
