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Université d'Orléans |  |
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Université d'Orléans | |
| HAL: hal-00191122, version 1 |
| DOI: 10.1016/j.mee.2007.11.007 |
| Detailed view |  Export this paper |
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| Microelectronic Engineering 85 (2008) 636-639 |
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| Large area silicon epitaxy using pulsed DC magnetron sputtering deposition |
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| Pascale Plantin 1Fatiha Challali 2 |
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| Pulsed DC magnetron sputtering is used for deposition of large area crystalline (200 mm) silicon 100nm thin films. p doped Si substrates are flashed (Ts = 900 °C) under high vacuum (5 10-6 Pa) for removing native oxide and restoring surface crystallinity. Subsequent boron doped Si homoepitaxy is obtained at substrate temperature below 500°C for pulse frequency of 150 kHz. |
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| 1: | Groupe de recherches sur l'énergétique des milieux ionisés (GREMI) |
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CNRS : UMR6606 – Université d'Orléans |
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| 2: | MHS Electronics |
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Société privée |
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| 3: | MHS Equipment |
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Société privée |
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| Subject | : | Engineering Sciences/Plasmas Engineering Sciences/Micro and nanotechnologies/Microelectronics |
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| Magnetron sputtering – Epitaxy – Crystalline silicium layer |
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| Attached file list to this document: | |||||
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| hal-00191122, version 1 | |
| http://hal.archives-ouvertes.fr/hal-00191122 | |
| oai:hal.archives-ouvertes.fr:hal-00191122 | |
| From: Pascal Brault | |
| Submitted on: Friday, 23 November 2007 17:58:27 | |
| Updated on: Saturday, 4 October 2008 00:36:44 | |
