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Photonics and Nanostructures - Fundamentals and Applications 5 (2007) 86-90
InGaN green light emitting diodes with deposited nanoparticles
B. Butun 1, Jean Cesario 2, 3, Stefan Enoch 2, Romain Quidant 3, E. Ozbay 1
(03/08/2007)

We grew an InGaN/GaN-based light-emitting diode (LED) wafer by metal–organic chemical vapor deposition (MOCVD), fabricated devices by optical lithography, and successfully deposited ellipsoidal Ag nano-particles by way of e-beam lithography on top. The diodes exhibited good device performance, inwhich we expected an enhancement of the radiated intensity by the simulations and emission measurements. The obtained results showed the feasibility of plasmon-assisted LED emission enhancement.
1 :  Nanotechnology Research Center
Bilkent University
2 :  Institut FRESNEL (IF)
CNRS : UMR6133 – Université de Provence - Aix-Marseille I – Université Paul Cézanne - Aix-Marseille III – Ecole Centrale de Marseille
3 :  Institut de Ciencies Fotoniques (ICFO)
Institut de Ciencies Fotoniques
Physique/Physique/Physique Générale