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Semiconductor Science & Technology 25 (2010) 065001
Fabrication of amorphous silicon nanoribbons by atomic force microscope tip induced local oxidation for thin film device applications
Laurent Pichon 1, Regis Rogel 1, Fouad Demami 1
(30/04/2010)

We demonstrate the feasibility of induced local oxidation of amorphous silicon by atomic force microscopy. The resulting local oxide is used as mask for the elaboration of thin film silicon resistor. A thin amorphous silicon layer deposited on a glass substrate is locally oxidized following narrow continuous lines. The corresponding oxide line is then used as mask during plasma etching of the amorphous layer leading to the formation of nanoribbon. Such amorphous silicon nanoribbon is used for the fabrication of resistor.
1 :  Institut d'Electronique et de Télécommunications de Rennes (IETR)
CNRS : UMR6164 – Université de Rennes 1 – Institut National des Sciences Appliquées (INSA) - Rennes – SUPELEC
Dispositifs électroniques (DE)
Sciences de l'ingénieur/Micro et nanotechnologies/Microélectronique
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