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| HAL : hal-00327115, version 1 |
| DOI : 10.1109/TNS.2007.894298 |
| Fiche détaillée |  Récupérer au format |
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| IEEE Transactions on Nuclear Science 54, 4 (2007) 1025-1029 |
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| Temperature Effect on Heavy-Ion Induced Parasitic Current on SRAM by Device Simulation: Effect on SEU Sensitivity |
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| D. Truyen 1J. Boch 1 |
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| (08/2007) |
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| A temperature dependence analysis of single event transient currents induced by heavy-ions using TCAD simulation is performed in the 218 to 418 K range on a 0.18 mum SRAM cell manufactured by ATMEL. The single event upset (SEU) phenomena depends on both the heavy-ions-induced transient current and the technology. Temperature is shown to have a significant impact on the trends of heavy-ions-induced current. The SEU sensitivity is then expected to exhibit a large temperature dependence. However, a small influence on the SEU sensitivity is reported in this work on the studied technology. |
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| 1 : | Institut d'Electronique du Sud (IES) |
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CNRS : UMR5214 – Université Montpellier II - Sciences et techniques |
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| Domaine | : | Sciences de l'ingénieur/Electronique |
| hal-00327115, version 1 | |
| http://hal.archives-ouvertes.fr/hal-00327115 | |
| oai:hal.archives-ouvertes.fr:hal-00327115 | |
| Contributeur : Dauverchain Eric | |
| Soumis le : Mardi 7 Octobre 2008, 13:58:46 | |
| Dernière modification le : Jeudi 30 Octobre 2008, 13:59:14 | |
