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Fonctions Optiques pour les Technologies de l'informatiON - UMR CNRS 6082 |  |
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Fonctions Optiques pour les Technologies de l'informatiON - UMR CNRS 6082 | |
| HAL : hal-00654285, version 1 |
| Fiche détaillée |  Récupérer au format |
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| Indium Phosphide and Related Materials 2011, Berlin : Allemagne (2011) |
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| Carrier injection in GaAsP(N)/GaPN Quantum Wells on Silicon |
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| Charles Cornet 1Cédric Robert 1 |
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| (2011) |
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| We report efficient carrier injection in GaAsPN/GaPN quantum wells grown on Si. Electroluminescence of GaAsPN/GaPN and GaAsP/GaP quantum wells is first presented. Nitrogen is found to induce large bandgap bowing in the bandstructure as well as spectacular enhancement of radiative quantum efficiency. Tight-binding bandstructure calculations are then presented which reveal N-induced large bandgap modification. N-localised levels are supposed to play significant role in carrier injection inside GaAsPN/GaPN quantum wells while disorder alloying effects also participate to the achievement of such a high quantum efficiency. GaAsP/GaP and GaAsPN/GaPN quantum wells are finally grown on Silicon substrate, very near the GaP/Si interface. High resolution transmision electron microscopy performed on GaAsP/GaP/Si quantum wells indicate good strain status, as well as GaP/Si interface originating defects. Photoluminescence is finally detected at 810 nm up to 230K on silicon substrate from GaAsPN/GaPN quantum wells. This is explained by both a better carrier injection efficiency related to N-localized energy levels as well as a higher quantum efficiency than GaAsP/GaP/Si quantum wells. |
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| 1 : | Fonctions Optiques pour les Technologies de l'informatiON (FOTON) |
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CNRS : UMR6082 – Université de Rennes 1 – Institut National des Sciences Appliquées (INSA) - Rennes – Ecole Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT) – Institut Mines-Télécom – Télécom Bretagne – PRES Université Européenne de Bretagne [UEB] |
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| 2 : | Centre d'élaboration de matériaux et d'études structurales (CEMES) |
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CNRS : UPR8011 |
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| Foton-Insa |
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| Domaine | : | Sciences de l'ingénieur/Optique / photonique |
| hal-00654285, version 1 | |
| http://hal.archives-ouvertes.fr/hal-00654285 | |
| oai:hal.archives-ouvertes.fr:hal-00654285 | |
| Contributeur : Soline Boyer | |
| Soumis le : Mercredi 21 Décembre 2011, 15:05:46 | |
| Dernière modification le : Vendredi 19 Octobre 2012, 16:29:46 | |
