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Material Science and Engineering B (2012) http://dx.doi.org/10.1016/j.mseb.2012.03.053
Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate
Salman Salman 1, Hervé Folliot 1, Julie Le Pouliquen 1, Nicolas Chevalier 1, Tony Rohel 1, Cyril Paranthoën 1, Nicolas Bertru 1, Christophe Labbé 2, Antoine Létoublon 1, Alain Le Corre 1
(2012-04-09)

The growth and thermal conductivity of InAs quantum dot (QD) stacks embedded in GaInAs matrix with AlAs compensating layers deposited on (1 1 3)B InP substrate are presented. The effect of the strain compensating AlAs layer is demonstrated through Atomic Force Microscopy (AFM) and X-ray diffraction structural analysis. The thermal conductivity (2.7 W/m K at 300 K) measured by the 3ω method reveals to be clearly reduced in comparison with a bulk InGaAs layer (5 W/m K). In addition, the thermal conductivity measurements of S doped InP substrates and the SiN insulating layer used in the 3ω method in the 20-200 °C range are also presented. An empirical law is proposed for the S doped InP substrate, which slightly differs from previously presented results.
1:  Fonctions Optiques pour les Technologies de l'informatiON (FOTON)
CNRS : UMR6082 – Université de Rennes 1 – Institut National des Sciences Appliquées (INSA) : - RENNES – Ecole Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT) – PRES Université Européenne de Bretagne [UEB] – Télécom Bretagne
2:  Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP)
Ecole Nationale Supérieure d'Ingénieurs de Caen – Université de Caen Basse-Normandie – CNRS : UMR6252 – CEA : DSM/IRAMIS
FOTON Optoélectronique Hétéroépitaxie et Matériaux (OHM)
Engineering Sciences/Optics / Photonic

Engineering Sciences/Micro and nanotechnologies/Microelectronics

Physics/Condensed Matter/Materials Science
Thermoelectricity InP substrate InAs quantum dots Thermal conductivity
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