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| HAL : hal-00539603, version 1 |
| DOI : 10.1051/epjap/2010139 |
| Fiche détaillée |  Récupérer au format |
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| The European Physical Journal Applied Physics 52, 2 (2010) Article number 20301 |
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| Toward SiC-JFETs modelling with temperature dependence |
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Tarek Ben Salah 1Hervé Morel 1 |
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| (06/10/2010) |
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| This paper focuses on the modelling of a SiC-JFET. The novelty aspect is the dependence on temperature. An accurate model has been used in a previous work and an identification procedure for the main model parameters has been demonstrated. Readers have asked for a more advanced SiC JFET temperature-dependent model. A limitation of the current model versus temperature is verified and explained in order to introduce the necessity of a new temperature dependence model. A more advanced model is then considered and a comparative study between experiment and simulation of the device is established. The characteristics of three SiC JFETs devices are considered from experimental and simulation point-of-view. Simulations results clearly replicate the experimental data at different temperatures and a new validity approach, namely validity maps, is proposed. Validity domains are discussed. |
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| 1 : | Ampère |
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CNRS : UMR5005 – Université Claude Bernard - Lyon I – Institut National des Sciences Appliquées (INSA) - Lyon – Ecole Centrale de Lyon |
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| 2 : | Ecole Nationale d'Ingénieurs de Tunis (ENIT) |
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Ecole Nationale d'Ingénieurs de Tunis |
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| 3 : | Ecole Supérieure de Technologie et d'Informatique [Tunis-Carthage] (ESTI) |
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Université du 7 Novembre à Carthage |
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| Domaine | : | Sciences de l'ingénieur/Energie électrique |
| hal-00539603, version 1 | |
| http://hal.archives-ouvertes.fr/hal-00539603 | |
| oai:hal.archives-ouvertes.fr:hal-00539603 | |
| Contributeur : Publications Ampère | |
| Soumis le : Mercredi 24 Novembre 2010, 17:14:25 | |
| Dernière modification le : Mercredi 31 Octobre 2012, 12:24:15 | |
