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| HAL : hal-00476197, version 1 |
| DOI : 10.1166/sl.2009.1135 |
| Fiche détaillée |  Récupérer au format |
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| Sensor Letters 7, 5 (2009) 707-711 |
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| Epitaxial Layer Parameters Estimation Approach of Silicon Carbide Schottky Diodes |
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| Tarek Ben Salah 1Mahbouba Amairi 1 |
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| (10/2009) |
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| Silicon-carbide Schottky diode is seen as one of the newest devices deployed in sensor application. Temperature sensors using these highly developed devices have been introduced. The linearity of the output signal versus temperature of the silicon-carbide Schottky diode is demonstrated. From a modeling point of view, accurate simulations are necessary for checking sensor behavior. These simulations tend to rely on component models and associated confidential epitaxial parameters. Therefore, this paper sets out to extract accurate parameters of the silicon-carbide Schottky diode. In pursuit of this end, a systematic approach is developed and a physically based model is introduced. This model is run for many devices, giving directly epitaxial layer parameters. A contrastive study between experimental and simulation is undertaken, resulting in good agreement. |
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| 1 : | Ampère |
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CNRS : UMR5005 – Université Claude Bernard - Lyon I – Institut National des Sciences Appliquées (INSA) - Lyon – Ecole Centrale de Lyon |
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| Domaine | : | Sciences de l'ingénieur/Energie électrique |
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| Silicon Carbide – Sensor – Parameter Estimation – Measurement – Modeling – PIN DIODE – VOLTAGE |
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| hal-00476197, version 1 | |
| http://hal.archives-ouvertes.fr/hal-00476197 | |
| oai:hal.archives-ouvertes.fr:hal-00476197 | |
| Contributeur : Publications Ampère | |
| Soumis le : Vendredi 23 Avril 2010, 22:55:58 | |
| Dernière modification le : Vendredi 23 Avril 2010, 22:55:58 | |
