2186 articles – 2572 references  [version française]
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Characterisation of deep level trap centres in 6H-SiC p-n junction diodes
Ghaffour K., Lauer V., Souifi A., Guillot G., Raynaud C., Ortolland S., Locatelli M.-L., Chante J.-P.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 66, 1-3 (1999) 106-110 [hal-00141523 - version 1]
Investigations on the thermal behavior of interconnects under ESD transients using a simplified thermal RC network
Salome P., Leroux C., Crevel P., Chante J.-P.
Microelectronics Reliability 39, 11 (1999) 1579-1591 [hal-00141521 - version 1]
Teleoperation through the Internet : Experimental Results with a Complex Manipulator
Leleve A., Fraisse P., Dauchez P., Pierrot F.
Dans Proceedings of International Symposium on Robotics (ISR'99) - International Symposium on Robotics (ISR'99), Japon (1999) [hal-00189543 - version 1]
Experimental results on motion generation and control of non-holonomic mobile manipulator
Dauchez P., Fraisse P., Leleve A., Pierrot F.
Dans Proceedings of International Symposium on Robotics (ISR'99) - International Symposium on Robotics (ISR'99), Japon (1999) [hal-00189539 - version 1]
Diagnosis through bilateral membership functions and pattern recognition
Boutleux E., Dubuisson B.
International Journal of Uncertainty Fuzziness and Knowledge-Based Systems 7, 5 (1999) 501-540 [hal-00140635 - version 1]
Modeling and simulation of robotic tasks teleoperated through the internet
Leleve A., Fraisse P., Dauchez P., Pierrot F.
Dans Proceedings of 1999 IEEE/ASME International Conference on Advanced Intelligent Mechatronics (AIM'99) - International Conference on Advanced Intelligent Mechatronics (AIM'99), États-Unis (1999) [hal-00189549 - version 1]
Design of a 600 V silicon carbide vertical power MOSFET
Planson D., Locatelli M.-L., Lanois F., Chante J.-P.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 61, 2 (1999) 497-501 [hal-00141536 - version 1]
Current-voltage characteristics of large area 6H-SiC pin diodes
Badila M., Tudor B., Brezeanu G., Locatelli M.-L., Chante J.-P., Millán J. Del R., Godignon P., Lebedev A. A., Banu V.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 61, 2 (1999) 433-436 [hal-00141534 - version 1]
On the interpretation of high frequency capacitance data of 6H-SiC boron compensated pin junction
Brezeanu G., Badila M., Tudor B., Millán J. Del R., Godignon P., Chante J.-P., Locatelli M.-L., Lebedev A. A., Banu V.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 61, 2 (1999) 429-432 [hal-00141532 - version 1]
P-N Junction creation in 6H-SiC by aluminum implantation
Ottaviani L., Locatelli M.-L., Planson D., Isoird K., Chante J.-P., Morvan E., Godignon P.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 61, 2 (1999) 424-428 [hal-00141527 - version 1]