| Publication type: |
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Article in peer-reviewed journal |
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| Subject: |
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Engineering Sciences/Electric power
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| Title: |
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Toward SiC-JFETs modelling with temperature dependence |
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| Author(s): |
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Tarek Ben Salah 1, Hervé Morel ( ) 1, Sameh Mtimet 2, 3 |
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| Laboratory: |
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| Abstract: |
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This paper focuses on the modelling of a SiC-JFET. The novelty aspect is the dependence on temperature. An accurate model has been used in a previous work and an identification procedure for the main model parameters has been demonstrated. Readers have asked for a more advanced SiC JFET temperature-dependent model. A limitation of the current model versus temperature is verified and explained in order to introduce the necessity of a new temperature dependence model. A more advanced model is then considered and a comparative study between experiment and simulation of the device is established. The characteristics of three SiC JFETs devices are considered from experimental and simulation point-of-view. Simulations results clearly replicate the experimental data at different temperatures and a new validity approach, namely validity maps, is proposed. Validity domains are discussed. |
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| Fulltext language: |
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English |
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| Journal: |
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The European Physical Journal Applied Physics |
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| Audience: |
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international |
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| Publication date: |
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2010-10-06 |
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| Volume: |
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52 |
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| Issue: |
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2 |
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| Page, identifiant, ...: |
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Article number 20301 |
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