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| HAL : hal-00579353, version 1 |
| DOI : 10.1051/epjap/2010100172 |
| Fiche détaillée |  Récupérer au format |
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| The European Physical Journal Applied Physics 53, 1 (2011) Article Number: 10301 |
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| Modelling, analysis, and experimental study of SiC JFET body diode |
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| Tarek Ben Salah 1, 2Y. Lahbib 2 |
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| (01/2011) |
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| Within Silicon Carbide Junction Field Effect Transistor (SiC-JFET) model, body diode is not extensively studied and almost under-researched. Body diode remains a complex device to study particularly during switching transients. In this paper, the JFET body diode is experimentally demonstrated to be a power. PiN diode. Finite element method model based on the device geometry and SiC material is used to accurately simulate this diode. Accurate simulations are necessary for analysis and verification purposes. Simulation relies on component models and associated parameters. The paper focuses on a step-by-step extraction procedure for design parameters of the SiC-JFET body diode. A comparative study between experimental data and simulation results is given to validate the device model and associate parameters |
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| 1 : | Ampère |
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CNRS : UMR5005 – Université Claude Bernard - Lyon I – Institut National des Sciences Appliquées (INSA) - Lyon – Ecole Centrale de Lyon |
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| 2 : | ENIT LSE |
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Université Tunis El Manar |
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| Domaine | : | Sciences de l'ingénieur/Energie électrique |
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| I-N-DIODES – PIN DIODE – POWER – EXTRACTION – DEVICES |
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| hal-00579353, version 1 | |
| http://hal.archives-ouvertes.fr/hal-00579353 | |
| oai:hal.archives-ouvertes.fr:hal-00579353 | |
| Contributeur : Publications Ampère | |
| Soumis le : Mercredi 23 Mars 2011, 15:42:52 | |
| Dernière modification le : Mercredi 23 Mars 2011, 15:42:52 | |
