Compensation in undoped and halogen doped CdTe crystals

R. Stuck (1) , A. Cornet (1) , P. Siffert (1)

1 IReS - Institut de Recherches Subatomiques

A theoretical model is proposed which allows the calculation of the concentration of defects in pure and halogen compensated cadmium telluride grown by the THM method. All associations and ionization reactions are described in terms of the law of mass action. The ionization energies of the defects are taken from the energy level diagram established by taking into account the latest experimental data. The concentrations of the different defects calculated for chlorine doped material are in good agreement with that measured using a time of flight method.

Mots clés: Defect density; Defect states; Ionization potential; Doping; Impurity; Halogen addition; Cadmium tellurides; Semiconductor materials; Theoretical study

Domaines: Articles anciens

R. Stuck, A. Cornet, P. Siffert. Compensation in undoped and halogen doped CdTe crystals. Revue de Physique Appliquée, 1977, 12 (2), pp.218-218. ⟨10.1051/rphysap:01977001202021800⟩. ⟨jpa-00244146⟩