Percolation and superconductivity in ion-implanted aluminium films

Frédéric Meunier (1) , P. Pfeuty (1) , A.M. Lamoise (2) , J. Chaumont (2) , H. Bernas (3) , C. Cohen

1 LPS - Laboratoire de Physique des Solides
2 CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
3 IPNO - Institut de Physique Nucléaire d'Orsay

Ion implantation of Si and Ge in Al thin films at 8 K produces alloys exhibiting enhanced superconducting transition temperatures (up to 8.35 K for Al 60Si40) and a metal-non metal transition at a volume concentration of 45 % Si. These results are compared to those obtained by other authors on films prepared by evaporation on cold substrate.

Mots clés: aluminium alloys; germanium alloys; ion implantation; silicon alloys; superconducting thin films; superconducting transition temperature; type II superconductors; superconductivity; Al; thin films; 8K; superconducting transition temperatures; metal to nonmetal transition; Al Si alloy; Al Ge alloy; percolation

Domaines: Articles anciens; Instrumentations et Détecteurs [physics.ins-det]

Frédéric Meunier, P. Pfeuty, A.M. Lamoise, J. Chaumont, H. Bernas, et al.. Percolation and superconductivity in ion-implanted aluminium films. Journal de Physique Lettres, 1977, 38 (21), pp.435-437. ⟨10.1051/jphyslet:019770038021043500⟩. ⟨jpa-00231414⟩