HAL : jpa-00225950, version 1

DOI : 10.1051/jphyscol:1986755

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Journal de Physique Colloques 47, C7 (1986) C7-321-C7-326

AN ATOM-PROBE COMPOSITIONAL STUDY OF Pd-Si INTERFACES

T. Sakata, Y. Hasegawa, A. Kobayashi, T. Sakurai

(1986)

The compositional analysis of thin films of Pd-silicides to the Si substrate has been performed for the first time using an atom-probe field ion microscope. Pd-silicides were grown on Si emitter surfaces at 50 K and 823 K (550 C). It was found that the outermost layer of the films was of pure Si in both cases and that it was followed by Si rich Si-Pd mixed region, PdSi, Pd rich mixed region, Pd2Si and the substrate. The interface reactions were discussed in terms of a substitution model of Si and Pd atoms at the reaction front of the interface.

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Physique/Articles anciens

jpa-00225950, version 1

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Contributeur : Archives Journal de Physique <>

Soumis le : Mercredi 1 Janvier 1986, 08:00:00

Dernière modification le : Mercredi 1 Janvier 1986, 08:00:00