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| HAL : jpa-00225949, version 1 |
| DOI : 10.1051/jphyscol:1986754 |
| Fiche détaillée |  Récupérer au format |
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| Journal de Physique Colloques 47, C7 (1986) C7-315-C7-319 |
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| AP-FIM STUDY OF Si OXIDE AND Si-Si OXIDE INTERFACE |
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| T. AdachiM. Tomita |
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| (1986) |
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| The stoichiometry of Si oxide and the structure of Si-Si oxide interface were studied using pulsed-laser stimulated atom-probe field-ion microscope (PL-APFIM). The compositions of native oxide and thermal oxide films were Si:0=1:0.9 and Si:0=1:2, respectively. The interface of the thermal oxide was composed of the transition layer of Si2O3, which was thinner than two atomic layers. The oxide layer grown by laser irradiation onto Si clean tip in O2 gas of 7x10-2 Pa was also presented. |
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| Domaine | : | Physique/Articles anciens |
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| jpa-00225949, version 1 | |
| http://hal.archives-ouvertes.fr/jpa-00225949 | |
| oai:hal.archives-ouvertes.fr:jpa-00225949 | |
| Contributeur : Archives Journal de Physique | |
| Soumis le : Mercredi 1 Janvier 1986, 08:00:00 | |
| Dernière modification le : Mercredi 1 Janvier 1986, 08:00:00 | |
