| Good quality field ion images of 2H-SiC and β-SiC whisker were obtained using a He imaging gas at 20K. The compositional depth profiles of annealed specimens of SiC showed that the surface region was enriched in C and that the top layer consisted of carbon atoms only. In contrary, the Si concentration at the surface was found to increase when SiC was annealed in the presence of O2 or H2O gas. In our present study on the Ti/SiC system, we conclude ; (1) Ti did not mix with SiC at all below room temperature, in contrast to the case of the Ti/Si system. (2) Annealing at higher temperatures (~700°C) resulted in intermixing of Ti, Si and C at the interface. The thickness of the interface was estimated to be approximately three atomic layers. In the Pd/SiC system, intermixing at the interface was noticed after annealing at lower temperature than the Ti/SiC system. |
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