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| HAL : jpa-00225947, version 1 |
| DOI : 10.1051/jphyscol:1986752 |
| Fiche détaillée |  Récupérer au format |
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| Journal de Physique Colloques 47, C7 (1986) C7-303-C7-308 |
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| PULSED-LASER ATOM-PROBE STUDY OF Al-GaAs INTERFACES |
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| O. NishikawaM. Yanagisawa |
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| (1986) |
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| The interfaces of a thin Al layer and non-doped, Zn-doped and Si-doped GaAs were mass analyzed by the pulsed-laser atom-probe. The variation of depth profile of composition across the interfaces with temperatures indicates that the diffusibility of Al and Ga across the Al-GaAs interfaces appears to be high for non-doped and Zn-doped GaAs and low for Si-doped GaAs. The depth profiles also indicate that As is not mobile for the present temperature range, below 350K, and serves as a reference marker for diffusing Ga and Al. |
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| Domaine | : | Physique/Articles anciens |
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| jpa-00225947, version 1 | |
| http://hal.archives-ouvertes.fr/jpa-00225947 | |
| oai:hal.archives-ouvertes.fr:jpa-00225947 | |
| Contributeur : Archives Journal de Physique | |
| Soumis le : Mercredi 1 Janvier 1986, 08:00:00 | |
| Dernière modification le : Mercredi 1 Janvier 1986, 08:00:00 | |
