ELECTRON SPIN RESONANCE INVESTIGATION OF THE EFFECTS OF THE H2+ IMPLANTATION AND DIFFUSION ONE THE LASER INDUCED DEFECTS IN VIRGIN SILICON

A. Goltzene , B. Meyer , C. Schwab , J.C. Muller (1) , P. Siffert (1)

1 IReS - Institut de Recherches Subatomiques

Electron paramagnetic resonance of the defects induced by laser annealing at high power density (2 J/cm-2) has been investigated in virgin FZ semi-insulating Silicon. A further H2+ implantation and diffusion is inactive on the signal observed at gx = 2.0055 ± 0.0005. This is consistent with the attribution of X to the dangling bonds, created by the mechanical stresses during the thermal shock, as they are not passivated by molecular hydrogen.

Domaines: Articles anciens; Instrumentations et Détecteurs [physics.ins-det]

A. Goltzene, B. Meyer, C. Schwab, J.C. Muller, P. Siffert. ELECTRON SPIN RESONANCE INVESTIGATION OF THE EFFECTS OF THE H2+ IMPLANTATION AND DIFFUSION ONE THE LASER INDUCED DEFECTS IN VIRGIN SILICON. Laser-Solid Interactions and Transient Thermal Processing of Materials, 1983, Strasbourg, France. pp.C5-307-C5-311, ⟨10.1051/jphyscol:1983546⟩. ⟨jpa-00223132⟩