| The results of a systematic study of hydrogen evolution from glowdischarge a-Si : H films are presented. The influence of doping, film thickness and substrate temperature is discussed. Two evolution processes can be discerned : A low temperature effusion attributed to the release of H2 through voids or cracks from polysilane-like intergrain material and an evolution at high temperatures from compact a-Si : H material, dominated by atomic diffusion of hydrogen. Addition of diborane leads to a pronounced shift of the evolution peaks of both processes to lower temperatures and to a change of the hydrogen content. |
Export this paper
