%0 Unpublished work
%T Disorder-induced phase transitions in double HgTe quantum wells
%+ Laboratoire Charles Coulomb (L2C)
%+ Institute for Physics of Microstructures of the RAS
%A Krishtopenko, Sergey
%A Ikonnikov, A.
%A Jouault, Benoit
%A Teppe, Frederic
%8 2023-11-24
%D 2023
%Z 2308.13440
%R 10.48550/arXiv.2308.13440
%K Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
%K Materials Science (cond-mat.mtrl-sci)
%K FOS: Physical sciences
%Z Physics [physics]/Condensed Matter [cond-mat]Preprints, Working Papers, ...
%X By using the self-consistent Born approximation, we investigate disorder effect induced by shortrange impurities on the band-gap of a seminal two-dimensional (2D) system, whose phase diagram contains trivial, single-band-inverted and double-band-inverted states. Following the density-ofstates (DOS) evolution, we demonstrate multiple closings and openings of the band-gap with the increase of the disorder strength. Calculations of the spectral function describing the quasiparticles at the Γ point of the Brillouin zone evidence that the observed band-gap behavior is unambiguously caused by the topological phase transitions due to the mutual inversions between the first and second electron-like and hole-like subbands. We also find that an increase in the disorder strength in the double-inverted state always leads to the band-gap closing due to the overlap of the tails of DOS from conduction and valence subbands.
%G English
%2 https://hal.science/hal-04304435/document
%2 https://hal.science/hal-04304435/file/2308.13440%20%281%29.pdf
%L hal-04304435
%U https://hal.science/hal-04304435
%~ CNRS
%~ L2C
%~ UNIV-MONTPELLIER
%~ UM-2015-2021
%~ UM-EPE