%0 Journal Article
%T Extended Defects in SiC: Selective Etching and Raman Study
%+ Institute of High Pressure Physics [Warsaw] (IHPP)
%+ Laboratoire Charles Coulomb (L2C)
%+ Naval Research Laboratory (NRL)
%A Weyher, J, L
%A Tiberj, Antoine
%A Nowak, G.
%A Culbertson, J, C
%A Freitas, J, A
%< avec comité de lecture
%@ 0361-5235
%J Journal of Electronic Materials
%I Institute of Electrical and Electronics Engineers
%V 52
%N 8
%P 5039-5046
%8 2023-08
%D 2023
%R 10.1007/s11664-023-10272-6
%Z Physics [physics]/Condensed Matter [cond-mat]Journal articles
%X Abstract Controlling the electrical properties of SiC requires knowledge of the nature and properties of extended defects. We have employed orthodox defect-selective etching and photo-etching methods to reveal typical and new structural defects in commercial SiC wafers. For photo-etching, the etch rate increases as the free carrier concentration decreases. The etch rate can be used to estimate the free carrier concentration with higher precision, and over a larger lateral and depth range than that accessed by Raman scattering. The logarithmic dependence of the etch rate on the free carrier concentration has been characterized.
%G English
%L hal-04214705
%U https://hal.science/hal-04214705
%~ CNRS
%~ L2C
%~ UNIV-MONTPELLIER
%~ UM-2015-2021
%~ UM-EPE