%0 Conference Paper
%F Oral 
%T Telecom-band single photon sources monolithically grown on silicon
%+ INL - Matériaux Fonctionnels et Nanostructures (INL - MFN)
%+ INL - Spectroscopies et Nanomatériaux (INL - S&N)
%+ INL - Hétéroepitaxie et Nanostructures (INL - H&N)
%+ Laboratoire Charles Coulomb (L2C)
%+ INL - Ingénierie et conversion de lumière (i-Lum) (INL - I-Lum)
%+ Centre de Nanosciences et de Nanotechnologies (C2N)
%A Chauvin, Nicolas
%A Jaffal, Ali
%A Redjem, Walid
%A Regreny, Philippe
%A Nguyen, Hai Son
%A Cueff, Sébastien
%A Letartre, Xavier
%A Patriarche, Gilles
%A Rousseau, Emmanuel
%A Cassabois, Guillaume
%A Gendry, Michel
%F Invité
%< avec comité de lecture
%B Trends in NanoTechnology 2023
%C Lyon, France
%8 2023-08-28
%D 2023
%Z Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
%Z Engineering Sciences [physics]/Materials
%Z Engineering Sciences [physics]/Optics / PhotonicConference papers
%X Securing communications over long distances requires bright single photon sources emitting in the telecom band in a well-defined spatial and polarization mode. First, we report our efforts to obtain single photon emission and a Gaussian far-field radiation pattern in the telecom O-band from single quantum dot-nanowires (QD-NWs) monolithically grown on silicon. The InAs/InP QD-NWs were grown on silicon (111) substrates by Vapor-Liquid-Solid assisted solid-source Molecular Beam Epitaxy using In-Au droplets as a catalyst in-situ deposited at 500°C [1]. Low QD-NW density was obtained by a careful control of the In/Au catalyst flux ratio to achieve density <1 NW/μm² [2]. The growth conditions have been tuned (Fig 1.a) to optimize the source brightness and reduce the far-field divergence. The control of the nanowire geometry allows us to demonstrate a Gaussian far field emission profile with an emission angle θ≈30° (Fig 1.c) from a single QD at room temperature in the telecom O-band and the observation of single photon emission with g2(0) = 0.05 (Fig 1.b) at cryogenic temperature [3]. Secondly, we have optimized the growth procedure to achieve InAs/InP QD NWs with an elongated top-view cross-section. Polarization-resolved photoluminescence measurements have revealed a significant influence of the asymmetric shaped NWs on the InAs QD emission polarization with the photons being mainly polarized parallel to the NW long cross section axis [4]. A degree of linear polarization (DLP) up to 91% is obtained, being at the state of the art for the reported DLP values from QD-NWs.\\References:[1] A. Mavel et al, Journal of Crystal Growth, 458 (2017) 96.[2] A. Jaffal et al, Nanotechnology, 31 (2020) 354003.[3] A. Jaffal et al, Nanoscale, 11 (2019) 21847-21855.[4] A. Jaffal et al, Nanoscale, 13 (2021) 16952–16958.
%G English
%L hal-04195386
%U https://hal.science/hal-04195386
%~ CNRS
%~ UNIV-LYON1
%~ INSA-LYON
%~ EC-LYON
%~ INL
%~ L2C
%~ UNIV-PARIS-SACLAY
%~ UNIV-MONTPELLIER
%~ INSA-GROUPE
%~ UDL
%~ UNIV-LYON
%~ UNIVERSITE-PARIS-SACLAY
%~ GS-PHYSIQUE
%~ INSTITUT-SCIENCES-LUMIERE
%~ UM-2015-2021
%~ UM-EPE
%~ EC_LYON_STRICT
%~ C2N
%~ RENATECH