%0 Journal Article
%T Low frequency noise in p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/n-InAsSbP mid-IR light emitting diodes
%+ Laboratoire Charles Coulomb (L2C)
%+ A.F. Ioffe Physical-Technical Institute
%A Dyakonova, N.
%A Karandashev, S.A.
%A Levinshtein, M.E.
%A Matveev, B.A.
%A Remennyi, M.A.
%< avec comité de lecture
%@ 1350-4495
%J Infrared Physics and Technology
%I Elsevier
%V 125
%P 104301
%8 2022-09
%D 2022
%R 10.1016/j.infrared.2022.104301
%K Mid-IR photodetectors
%K InAs photodiodes
%K Low frequency noise
%K Photocurrent noise
%K Photovoltaic mode
%K Optical output noise
%Z Physics [physics]Journal articles
%X The frequency and current dependences of the optical output spectral noise density, Slph, in p-InAsSbP/n-InAs infrared light emitting diodes (LEDs) has been measured for the first time. LEDs with emission centered at wavelengths  = 2.8 and 3.5 µm have been studied. In both cases, in the frequency range 2 ≤ f ≤ 100 Hz the noise spectrum is 1/f like. At constant LED pumping current, Slph is proportional to the photocurrent squared (~ Iph2). The 1/f noise intensity Slph for the LED with emission centered at  = 2.8 µm is ~2 times higher. In the LED pumping current range 0.02  ILED  0.1 A (60  jLED  300 A/cm2) the optical output 1/f noise is practically independent of ILED. The intensity of the LEDs’ optical output 1/f noise is less than the intensity of the photodiode reverse bias current noise by ~4 orders of magnitude.
%G English
%Z IRP TeraMIR
%L hal-04104595
%U https://hal.science/hal-04104595
%~ CNRS
%~ L2C
%~ UNIV-MONTPELLIER
%~ UM-2015-2021
%~ UM-EPE